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TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
Copyright (c) 1999, Power Innovations Limited, UK FEBRUARY 1999
OVERVOLTAGE PROTECTION FOR DUAL-VOLTAGE RINGING SLICS
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Programmable Protection Configurations up to 100 V Typically 5 Lines Protected by Two TISP83121D + Diode Steering Networks High Surge Current - 150 A 10/1000 s - 150 A 10/700 s - 500 A 8/20 s Pin compatible with the LCP3121 - Functional Replacement in Diode Steering Network Applications - 50% more surge current Small Outline Surface Mount Package - Available Ordering Options
CARRIER Tube Taped and reeled PART # TISP83121D TISP83121DR
D PACKAGE (TOP VIEW)
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K G1 G2 K
1 2 3 4
8 7 6 5
K A A K
MD6XAYA
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For operation at the rated current values connect pins 1, 4, 5 and 8 together.
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device symbol
A
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G2
G1
description
The TISP83121D is a dual-gate reverse-blocking unidirectional thyristor designed for the protection of dual-voltage ringing SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The device chip is a four-layer NPNP silicon thyristor structure which has an electrode connection to every layer. For negative overvoltage protection the TISP83121D is used in a common anode configuration with the voltage to be limited applied to the cathode (K) terminal and the negative reference potential applied to the gate 1 (G1) terminal. For positive overvoltage protection the TISP83121D is used in a common cathode configuration with the voltage to be limited applied to the anode (A) terminal and the positive reference potential applied to the gate 2 (G2) terminal. The TISP83121D is a unidirectional protector and to prevent reverse bias, requires the use of a series diode between the protected line conductor and the protector. Further, the gate reference supply voltage requires an appropriately poled series diode to prevent the
K
SD6XAKA
supply from being TISP83121D crowbars.
shorted
when
the
Under low level power cross conditions the TISP83121D gate current will charge the gate reference supply. If the reference supply cannot absorb the charging current its potential will increase, possibly to damaging levels. To avoid excessive voltage levels a clamp (zener or avalanche breakdown diode) may be added in shunt with the supply. Alternatively, a grounded collector emitter-follower may be used to reduce the charging current by the transistors HFE value. This monolithic protection device is made with a ion-implanted epitaxial-planar technology to give a consistent protection performance and be virtually transparent to the system in normal operation.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
FEBRUARY 1999
absolute maximum ratings
RATING Repetitive peak off-state voltage, 0 C to 70 C Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/1000 s (GR-1089-CORE, open-circuit voltage wave shape 10/1000 s) 5/310 s (CCITT K20/21, open-circuit voltage wave shape 7 kV10/700 s) 8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s) Non-repetitive peak on-state current, 50 Hz, halfwave rectified sinewave, (see Notes 1 and 2) 100 ms 1s 900 s Junction temperature Storage temperature range TJ Tstg ITSM 22 8 3 -40 to +150 -65 to +150 C C A ITSP 150 150 500 A SYMBOL V DRM VALUE 100 UNIT V
NOTES: 1. Initially the protector must be in thermal equilibrium with 0 C < TJ < 70 C. The surge may be repeated after the device returns to its initial conditions. For operation at the rated current value, pins 1, 4, 5 and 8 must be connected together. 2. Above 70 C, derate linearly to zero at 150 C lead temperature.
electrical characteristics, TJ = 25 C (unless otherwise noted)
PARAMETER ID IDRM Off-state current Repetitive peak off-state current Holding current Reverse current Vd = 70 V, IG = 0 Vd = VDRM = 100 V, IG = 0, 0 C to 70 C TJ = 0 to 70 C IH IR IG1T IG2T VG1T VG2T CAK NOTE IT = 1 A, di/dt = -1A/ms VR = 0.3 V TJ = 25 C TJ = 70 C Gate G1 trigger current IT = +1 A, tp(g) = 20 s Gate G2 trigger current IT = +1 A, tp(g) = 20 s G1-K trigger voltage G2-A trigger voltage Anode to cathode offstate capacitance IT = +1 A, tp(g) = 20 s IT = +1 A, tp(g) = 20 s f = 1 MHz, Vd = 1 VRMS, VD = 5 V, IG = 0 (see Note 3) 90 60 1 +200 -180 +1.8 -1.8 100 mA mA mA V V pF TEST CONDITIONS MIN TYP MAX 1 10 300 mA UNIT A A
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are decoupled to the guard terminal of the bridge.
thermal characteristics
PARAMETER RJA Junction to free air thermal resistance TEST CONDITIONS TA = 25 C, EIA/JESD51-3 PCB, EIA/JESD51-2 environment, IT = ITSM(900) MIN TYP MAX 105 UNIT C/W
PRODUCT INFORMATION
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TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
FEBRUARY 1999
PARAMETER MEASUREMENT INFORMATION
+i QUADRANT 1 ANODE POSITIVE SWITCHING CHARACTERISTIC
VGT
IH
VR -v
ID VDRM IR REFERENCE VOLTAGE +v
QUADRANT III ANODE NEGATIVE REVERSE CHARACTERISTIC -i
PM6XAGB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC
multiple line overvoltage protection
Figure 2 shows two TISP83121D devices protecting many lines. Line conductor positive overvoltage protection is given by the steering diode array connected to the anode of the upper TISP83121D and the TISP83121D itself. The TISP83121D gate reference voltage is the positive battery supply, +VBAT. The initial limiting voltage will be the sum of the voltages of the battery, the forward biased conductor diode, the gate trigger of the TISP83121D and the forward biased reference voltage blocking diode. Typically the conductor voltage will be initially limited at 2.5 V above the +VBAT value. Line conductor negative overvoltage protection is given by the diode steering array connected to the cathode of the lower TISP83121D and the TISP83121D itself. The TISP83121D gate reference voltage is the negative battery supply, -VBAT. The initial limiting voltage will be the sum of the voltages of the battery, the forward biased conductor diode, the gate trigger of the TISP83121D and the forward biased reference voltage blocking diode. Typically the conductor voltage will be initially limited at 2.5 V below the -VBAT value. When an TISP83121D crowbars and grounds all conductors of the appropriate polarity, the device current will be the sum of all the SLIC output currents. This will usually exceed the TISP83121D holding current. To switch off the TISP83121D and restore normal operation, the grounded condition of the SLIC output must be detected and the SLIC outputs turned off. The 150 A rating of the TISP83121D allows a large number of lines to be protected against currents caused by lightning. For example, if a recommendation K.20 10/700 generator was connected to all lines, together
PRODUCT INFORMATION
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TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
FEBRUARY 1999 R1 R LINE 1 IN R T1 G2 SLIC 1 A +VE REFERENCE VOLTAGE +VBAT
G1 R K
TISP83121D
A R G2
0
RN R LINE N IN R TN SLIC N
TISP83121D K
G1 -VBAT -VE REFERENCE VOLTAGE AI8XAA
Figure 2. N LINE POSITIVE AND NEGATIVE OVERVOLTAGE PROTECTION
A A +VE REFERENCE VOLTAGE G2 +VBAT G1 G1 TISP83121D TISP83121D K A G2 TISP83121D G2 G1 K (A) -VE REFERENCE VOLTAGE -VBAT G1 K (B) -VBAT -VE REFERENCE VOLTAGE AI8XAB A TISP83121D K +VE REFERENCE VOLTAGE +VBAT
G2
0
0
Figure 3. REFERENCE VOLTAGE CONTROL BY (A) BREAKDOWN DIODES OR (B) BY TRANSISTOR BUFFERS with 350 V primary protection and a series conductor resistance (R) of 25 , the maximum conductor current before the primary protection operated would be 350/25 = 14 A or 28 A per line. For a total return current of about 150 A the number of lines would be 150/28 = 5. At this current level, 5x28 = 140 A, the generator
PRODUCT INFORMATION
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TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
FEBRUARY 1999
voltage would be 140((25+25)/10+15) = 2800 V. Another limitation is long term power cross. The long term power cross capability of the TISP83121D is 3 A peak or 2.1 A rms. If the line conductor overcurrent protection was given by a PTC resistor which switched at 0.2 A, the maximum number of conductors becomes 2.1/0.2 = 10 or 5 lines.
battery supply impedance
In many designs, the battery supply voltages are generated by switching mode power supplies. This type of power supply cannot be charged like a battery. Feeding a charging current to a switching mode power supply will usually cause the supply to stop switching and the voltage to rise. The gate current of the TISP83121D is a charging current for the supply. To avoid the supply voltage from rising and damaging the connected SLICs, an avalanche diode voltage clamp can be connected across the supply (Figure 3. (A)). Another approach is to reduce the gate charging current for the supply by a transistor buffer (Figure 3. (B)). If the transistor gain was 50, a 200 mA gate current would be reduced to a supply charging current of 200/50 = 4 mA In both cases, the dissipation in the control devices can be substantial and power capability needs to be taken into account in device selection.
PRODUCT INFORMATION
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TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
FEBRUARY 1999
MECHANICAL DATA D008 plastic small-outline package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
D008 5,00 (0.197) 4,80 (0.189) 8 7 6 5 Designation per JEDEC Std 30: PDSO-G8
6,20 (0.244) 5,80 (0.228)
4,00 (0.157) 3,81 (0.150)
1
2
3
4
1,75 (0.069) 1,35 (0.053)
7 NOM 3 Places
0,50 (0.020) x 45NOM 0,25 (0.010)
5,21 (0.205) 4,60 (0.181)
0,203 (0.008) 0,102 (0.004) 0,79 (0.031) 0,28 (0.011) Pin Spacing 1,27 (0.050) (see Note A) 6 Places
0,51 (0.020) 0,36 (0.014) 8 Places 0,229 (0.0090) 0,190 (0.0075)
7 NOM 4 Places
4 4
1,12 (0.044) 0,51 (0.020)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
MDXXAA
NOTES: A. B. C. D.
Leads are within 0,25 (0.010) radius of true position at maximum material condition. Body dimensions do not include mold flash or protrusion. Mold flash or protrusion shall not exceed 0,15 (0.006). Lead tips to be planar within 0,051 (0.002).
PRODUCT INFORMATION
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TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
FEBRUARY 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1999, Power Innovations Limited
PRODUCT INFORMATION
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